| PART |
Description |
Maker |
| SPP80N06S2L-11 SPB80N06S2L-11 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 11 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-H5 SPB80N06S2L-H5 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 5 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N04S2L-03 SPB80N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 80A; 40V; LL; 3.4mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPP14N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 13.9mOhm, 30A, LL
|
Infineon
|
| SPP80N06S2L-07 SPB80N06S2L-07 INFINEONTECHNOLOGIES |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 7 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IPI03N03LA IPP03N03LA IPB03N03LA |
OptiMOS®2 - Power packages
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 3.0mOhm, 80A, LL
OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
|
INFINEON[Infineon Technologies AG]
|
| KMB7D0DN40QB |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
